Analiza MOS tranzistorskih struktura za senzorske aplikacije

undergraduate thesis

• Title (english): Analysis of MOS transistor structures for sensor applications
• Author: Lovro Marković
• Mentor: Tomislav Suligoj (mentor)
• Committee member: Tomislav Suligoj (predsjednik povjerenstva)
• Committee member: Mirko Poljak (član povjerenstva)
• Committee member: Tihomir Knežević (član povjerenstva)
• Granter: University of Zagreb; Faculty of Electrical Engineering and Computing; Zagreb
• Defense date and country: 2017-07-13, Croatia
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Computing
• Scientific / art field, discipline and subdiscipline: TECHNICAL SCIENCES; Electrical Engineering

Abstract

Rad se temelji na elektroničkoj detekciji različitih molekula korištenjem MOS tranzistora. Analiziraju se temeljni pristupi dizajnu MOSFET struktura za senzorske primjene. Strukture su dizajnirane u standarnoj CMOS tehnologiji i simulirane koristeći TCAD programski paket. U središtu analize je osjetljivost njihovih strujno-naponskih karakteristika u odnosu na promjene koncentracija otopljenih tvari u otopini koja ih okružuje. Varijacije parametara modela uglavnom se odnose na parametre upravljačke (gate) elektrode. Simulacije su provedene za planarni MOSFET i naprednu FinFET strukturu uz usporedbu osjetljivosti njihovih karakteristika na promjene postavljenih parametara. S ciljem dobre procjene utjecaja otopine na strukturu, napravljeni su električni modeli različitih kemijskih spojeva radi procjene električkih uvjeta u različitim okruženjima. Kao nezavisna varijabla analize, uzeta je koncentracija substrata u otopini, a sami su senzori optimirani na maksimalnu osjetljivost.

Abstract (english)

This thesis focuses on the electrical sensing of different molecules at the MOS transistor level. The thesis summarizes two basic approaches in the design of MOSFET structures used in sensing applications. The structures are based on standard CMOS technology nodes and are defined in a TCAD software package. The sensitivity of their current-voltage characteristics on different material parameters, which are expected to change in various solutions of organic and anorganic molecules, are anaylzed. The parameter variation are primarily applied to the MOS gate stack. Simulations are carried out for the standard planar MOSFET and advanced FinFET structure comparing the sensitivity of their electrical characteristics on parameter variations. Electrical models of diverse chemical compounds are built in order to simulate changes of characteristics of a designed structure, when used in various types of surroundings. Different concentrations of chemical compounds are used as independent variables and the structures are optimized for maximum sensitivity.

• Keywords: senzori; nanoelektronika; mikroelektronika; elektronika; elektrotehnika; MOS; MOSFET; FinFET; tranzistor; CMOS
• Keywords (english): Sensors; Nanoelectronics; Microelectronics; Electonics; Electrical Engineering; MOS; MOSFET; FinFET; transistor; CMOS
• Language: croatian
• URN:NBN: urn:nbn:hr:168:727986
• Study programme: Title: Electrical Engineering and Information Technology; Study programme type: university; Study level: undergraduate; Academic / professional title: sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije (sveučilišni/a prvostupnik/ prvostupnica (baccalaureus/baccalaurea) inženjer/inženjerka elektrotehnike i informacijske tehnologije)
• Type of resource: Text
• File origin: Born digital
• Access conditions: Closed access
• Repository: FER Repository
• Created on: 2019-03-13 22:43:01