diplomski rad
Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors

Ana Petrinec (2018)
Sveučilište u Zagrebu
Prirodoslovno-matematički fakultet
Fizički odsjek
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Petrinec, A. (2018). Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors (Diplomski rad). Preuzeto s https://urn.nsk.hr/urn:nbn:hr:217:370582

Petrinec, Ana. "Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors." Diplomski rad, Sveučilište u Zagrebu, Prirodoslovno-matematički fakultet, 2018. https://urn.nsk.hr/urn:nbn:hr:217:370582

Petrinec, Ana. "Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors." Diplomski rad, Sveučilište u Zagrebu, Prirodoslovno-matematički fakultet, 2018. https://urn.nsk.hr/urn:nbn:hr:217:370582

Petrinec, A. (2018). 'Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors', Diplomski rad, Sveučilište u Zagrebu, Prirodoslovno-matematički fakultet, citirano: 21.08.2019., https://urn.nsk.hr/urn:nbn:hr:217:370582

Petrinec A. Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors [Diplomski rad]. Zagreb: Sveučilište u Zagrebu, Prirodoslovno-matematički fakultet; 2018 [pristupljeno 21.08.2019.] Dostupno na: https://urn.nsk.hr/urn:nbn:hr:217:370582

A. Petrinec, "Transient current technique (TCT) characterization of high-energy photon irradiated silicon detectors", Diplomski rad, Sveučilište u Zagrebu, Prirodoslovno-matematički fakultet, Zagreb, 2018. Dostupno na: https://urn.nsk.hr/urn:nbn:hr:217:370582